The semiconductor industry roadmap uses shorter wavelength light sources to produce smaller feature sizes on processors as well as on memory components.
Wavelengths ranging from 248 nm to 193 nm are currently used to produce feature sizes < 100 nm. The next generation includes EUV sources which use 13.5 nm for printing feature size as small as 32 nm. A source with very good brightness is needed for maintaining production throughput similar to that of DUV techniques. Therefore, EUV and UXV CMOS detectors with good UV sensitivity and good dynamic range are necessary to cope with pulsed sources that are used to characterise resin, prior to mask manufacturing. EUV sources can produce an large amount of debris so it is important that that the CMOS detectors withstand over exposures without saturation / bleeding artefacts as well as the potential contamination from debris coming from the plasma generation.